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Автор Huang Meng-bing
Автор Zhao Guo-qing
Автор Zhou Zhu-ying
Автор Tang Jia-yong
Автор Yang Fu-jia
Дата выпуска 1993-10-01
ISSN 1004-423X
Анннотация An energy dependence of the axial minimum channeling yield in GexSi1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He+ ions from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements are in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He+ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.
Название Abnormal energy dependence of axial minimum channeling yields in GexSi1-x/Si(100) strained layer superlattice
DOI 10.1088/1004-423X/2/10/003
Журнал Acta Physica Sinica (Overseas Edition)
Том 2
Выпуск 10

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