The electronic structure of the CoSi<sub>2</sub>(111) surface
L Magaud-Martinage; A Pasturel; F Cyrot-Lackmann; L Magaud-Martinage; Lab. d'Etude des Proprietes Electron. des Solides, Univ. Joseph Fourier, Grenoble, France; A Pasturel; Lab. d'Etude des Proprietes Electron. des Solides, Univ. Joseph Fourier, Grenoble, France; F Cyrot-Lackmann; Lab. d'Etude des Proprietes Electron. des Solides, Univ. Joseph Fourier, Grenoble, France
Журнал:
Journal of Physics: Condensed Matter
Дата:
1991-06-10
Аннотация:
The electronic structure of the CoSi<sub>2</sub>(111) surface is studied within the tight binding approximation coupled with the decimation technique. The different geometries considered have either a Co- or a Si-bulk terminated surface and are called CoSi<sub>2</sub>-Co and CoSi<sub>2</sub>-Si respectively. The CoSi<sub>2</sub>-Co surface shows a sharpening of the Co partial d density of states in relation with the reduction in the number of Co neighbours. In contrast, CoSi<sub>2</sub>-Si presents a surface state with a Co-d character at 2.3 eV below the Fermi level. This result is compared with the surface state determined by Pirri et al.
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